Electronica 2012: Rohm shows SiC and hydrogen fuel-cell
Rohm Semiconductor will be exhibiting its silicon carbide (SiC) mosfets, LEDs and drivers at electronica 2012 (Munich, Nov. 13-16) in Hall A5 on Booth 542.
Rohm’s SiC (Silicon Carbide) Schottky barrier diodes (SBD) and mosfets are designed to combine low loss and high voltage capability as well as fast recovery time.
Typical applications, including PFC (power factor correction) circuits, converters and inverters as used in EV/HEV and ndustrial units
A SiC power module integrates mosfets and SBDs and is designed to operate above 100kHz. “It reduces loss during power conversion by 85% compared with conventional Si IGBT modules,” said the company.
The firm’s LED drivers include drivers with dimmers for lower power consumption, compact units with integrated LDO regulator, RGB drivers that reduce the software load, and models with built-in flash.
Its new BD18377 LED drivers include programmable constant output, optimized accuracy and diagnostic features.
Rohm will also demonstrate its high-power hydrogen fuel cells.
Together with Kyoto-based Aquafairy and Kyoto University, Rohm has co-developed compact, lightweight, high-power hydrogen fuel cells ideally suited for power smartphones and other portable devices.
These fuel cells overcome the drawbacks of dry cells, lithium-ion cells, and direct methanol fuel cells, significantly reducing weight and increasing output power while providing a higher level of safety, providing power in places where AC power has to be replaced.