ST, Mikron to finish 90nm jv fab this year
Mikron, the Russian semiconductor firm from Zelenograd, plans to start producing wafers by the end of the year from its joint venture 90nm 8 inch fab it is building with STMicroelectronics.
“Mikron has had two projects with ST,” Karina Abagyan, marketing director of Mikron told EW at the ISS-SEMI meeting in Grenoble yesterday, “the first, starting in 2006, involved the transfer of 0.18 micron technology. At the end of 2009, the Russian RUSNANO project signed another agreement with ST for the transfer of 90nm technology licensed from ST.”
The fab will cost $400m and will be equipped to run 3,000 wafers a month.
The 0.18nm process will continue to be used for making power management ICs, bipolar ICs and BiCMOS ICs, and the new fab will be used for the RFID, smartcard and industrial ICs which it is currently manufacturing on 0.18 micron.
70% of Mikron’s $300m annual output of ICs is sold in Russia, said Abagyan, with most of the rest going to Hong Kong, Taiwan and South Korea.
20% of Mikron’s output is for RFID chips, 20% for smartcard chips, 30% for industrial applications, and between 5-10%% is power management ICs.
The company has an annual R&D budget of $12m.