Electronic Manufacturing News

AMS to fab in New York

AMS is to fab wafers in New York under an innovative deal with the State. A public-private funding deal will see New York State pay for the building of a fab designed to an AMS spec with AMS leasing and operating the fab for 20 years. It will be…

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Imec extends GaN-on-Si R&D programme

Imec is extending GaN-on-Si R&D programme to offer joint research on GaN-on-Si 200mm epitaxy and enhancement-mode device technology. The extended R&D initiative includes exploration of novel substrates to improve the quality of the epitaxial layers, new isolation modules to increase the…

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Interview: Manufacturing a million Micro:bits

An interview with Richard Curtin – senior director, strategic alliance, at element14 – the man responsible for manufacturing a million BBC Micro:bits, within a few months…

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Comment: Can Germany keep Europe in the FD-SOI game?

With FD-SOI now being proposed as the next generation semiconductor process technology, the epicentre for semiconductor manufacturing in Europe is shifting to Germany. With the eclipse of both STMicroelectronics and NXP as major European manufacturers of chips, the new momentum for investment in wafer fabs seems to be coming…

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Imec, Besi pave way to manufacturable 3D hybrid technology

Imec and Besi have developed an automated thermocompression solution for narrow-pitch die-to-wafer bonding, a method by which singulated dies are stacked onto bottom dies which are still part of a fully intact 300mm wafer. The technology paves the way to a manufacturable 2.5D, 3D, and 2…

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Future of robotics: Five things you should know about AI

From de-politicised drones to intelligent vacuum-cleaners and AI, this could be the future of robotics described in five technology predictions, writes Simon Holt. Robots have a bit of a mixed reputation in the media. One minute they’re vacuum cleaning our homes and delivering our pizzas, the next…

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GloFo launches 22FDX 22nm FD-SOI

Globalfoundries has launched a 22nm FD-SOI process called 22FDX which claims to deliver ‘finfet-like performance and energy-efficiency at a cost comparable to 28nm planar technologies’. Target markets are IoT, mainstream mobile, RF connectivity and networking. While some applications require the ultimate performance of finfet transistors, most wireless…

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Peregrine moves RF SOI to 300mm

Peregrine Semiconductor of San Diego announces UltraCMOS 11 – an RF SOI technology built on GloFo’s’ 130nm 300mm RF process. By moving to a 300mm wafer, Peregrine opens the door to new enhancements and advanced features in future generations of the UltraCMOS technology platform. UltraCMOS 11 technology uses a custom…

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