Globalfoundries opens up 28nm, 20nm FD-SOI process to all-comers
Globalfoundries is to manufacture FD-SOI chips for STMicroelectronics and ST-Ericsson at both 28nm and 20nm process generations which will be made avaialble to anyone wanting to use them.
ST has a limited availability of FD-SOI from its line at Crolles. “This arrangement ensures our customers will have a secure source of supply, says ST vp Joel Hartmann.
28nm FD-SOI, is currently in the ‘industrialisation phase’, says ST and is scheduled to be available for prototyping by July 2012.
“Porting libraries and physical IPs from 28nm bulk CMOS to 28nm FD-SOI is straightforward,” says ST’s vp for design Philippe Magarshack, “and designing digital SoCs with conventional CAD tools and methods in FD-SOI is identical to bulk, due to the absence of MOS-history-effect. In addition, FD-SOI can be used for either extreme performance or very low leakage on the same silicon, by biasing dynamically the substrate of the circuit. Finally, FD-SOI can operate at significant performance at low voltage with superior energy efficiency versus bulk CMOS.”
20nm FD-SOI is currently under development and is scheduled to be ready for prototyping by Q3 2013.
ST FD-SOI will deliver up to 35% lower power consumption at maximum performance, says ST.
“We have a longstanding partnership with ST spanning joint R&D and manufacturing, as well as an unmatched heritage of expertise in SOI technology,” says Globalfoundries’ CTO Gregg Bartlett.