Electronic Products News

31A 200V enhancement-mode GaN FET from Digi-Key

Efficient Power Conversion (EPC) has introduced two GaN FETs that handle 31A continuously – the 200V EPC2034 and the 150V EPC2033. The firm is keen to promote pulse capability, which is 140A for the 200V part, and 260A for the 150V part. Both are 2.6×4.6mm, and can operate with…

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Cambridge firm shows haptic display which is speaker too

Redux Labs will demonstrate its haptic touch panel technology in San Jose, California at Display Week, 2015. Cambridge-based Redux has developed an haptic touch technology which can also provide audio sound without separate speakers. It will show next week in California a 15-inch demonstrator for its haptic touch…

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Power Integrations beefs up CapZero X-cap discharger

Power Integrations has announced a second generation of its novel CapZero discharger chip for mains X-capacitors. X-capacitors can hold charge after mains-powered equipment is turned off. Without a discharge device, this can result in residual high-voltage being present, for example, on a disconnected mains plug. The…

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MIPS P5600 core licensed for Russian comms processor

Russian fables chip firm Baikal has integrated a multi-core MIPS Warrior P-class (P5600) CPU into its Baikal-T1 communications processor.  “We are glad to present the world’s first publicly-announced implementation of the P5600 CPU,” said Baikal CTO Grigoriy Khrenov, “We created a high-performance, highly efficient…

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Vishay powdered iron SMD inductors saturate up to 5A

Vishay has introduced a series of 0806 and 1008 low-profile, high-current power inductors with powdered iron cores for saturation current up to 5.8A.  ‘IHHP’ devices are offered in 2.0 x 1.6mm (0806) or 2.5 x 2.0mm (1008), each 1.0mm or 1.2mm…

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Socionext samples video playback IC

Socionext, the Fujitsu-Panasonic SoC jv, is sampling a single-chip IC for 4K/p60, HEVC and VP9 playback with built-in HDMI-Tx/Rx. The is compatible with HEVC Main 10 profile, and supports new copyright protection, HDR and wide color gamut…

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PCIM: First trench SiC mosfet is 2x better

Trench structures will halve the on-resistance of silicon carbide power mosfets, claimed Rohm. “Compared to existing planar-type SiC mosfets, on-resistance is reduced by 50% in the same chip size, making it possible to significantly decrease power loss,” said the firm. “Switching performance is improved with approximately 35…

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Hybrid connectors address challenges of PoE

Hybrid interfaces have been used in IT for a long time. Everyone is familiar with the USB and power over Ethernet (PoE) interface standards, through which end devices are supplied with both data and energy. These developments are also in demand in the more general industrial environment. Data transmission rates…

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