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The latest Electronics Weekly product news on memory technology (such as Flash, MRAM, SSD, NAND, F-RAM, DRAM, etc).

EW: Fujitsu 4Mbit FRAM reaches 54Mbyte/s operation


Fujitsu has launched a 4Mbit ferroelectric RAM (FRAM) with a quad SPI interface at Embedded World in Nuremberg. Called, MB85RQ4ML, with its four bi-directional I/O pins operating at 108MHz it can reach a data transfer rate of 54Mbyte/s. “In this respect, MB85RQ4ML is over four times as fast as our existing parallel 4Mbit FRAM device and even outperforms the 45ns parallel SRAM,” said ...

Solid-state drive has SATA III 6Gbit/s interface


Rutronik Embedded is offering a solid-state drive (SSD) from Transcend in a 2.5-inch form factor with integrated SLC NAND flash memory and a SATA III 6Gbit/s interface. The SSD570 has sequential read/write performance of up to 510Mbyte/s and 450Mbyte/s respectively. It comes with a built-in IPS function that assures more data volume being written into flash chips in the event ...

sureCore adds FDSOI memory compiler


sureCore, the Sheffield  SRAM IP specialist, today announced the immediate availability of its 28nm FDSOI memory compiler. The compiler supports the company’s low power, single port SRAM IP and dual port SRAM IP for 28nm FDSOI process technology. It offers capacities up to 1Mbit with word lengths up to 288bits and supports 4, 8 and 16 Mux factors. According to the ...

Glasgow and Leeds researchers move towards racetrack memory


Researchers from the Universities of Glasgow and Leeds have developed materials for implementing racetrack memory. Racetrack memory uses lines of nanowires. Electricity passed through the wires creates ‘domain walls’ – spaces between the wires where information can be stored. Materials are still a key question for implementing the technology. The team from Glasgow and Leeds used electron microscopy to look ...

Toshiba gives NAND a serial interface for NOR replacement


Toshiba’s latest range of NAND flash memory chips  have a serial interface. The advantage of the serial interface is that  the devices can be controlled with just 6-pins, and this means they can be used as low-pin count SLC NAND flash memory. SLC NAND flash memory is now being used as  a higher capacity alternative to NOR flash memory in some embedded ...

Micron legacy SDR/DDR modules live on at ATP


Micron Technology’s legacy DRAM modules (SDR/DDR) will be manufactured by ATP following a license agreement between the companies. Micron published EOL notices for these SDR and DDR DRAM modules in January 2015 with a Last Time Buy (LTB) in July 2015 and a Last Time Ship (LTS) in January 2016. Taiwan-based ATP will continue to manufacture these DRAM modules specifically for the ...

Atmel EEPROM needs just two pins, one wire


Atmel has designed a self-powered EEPROM which requires only two-pins—a data pin and ground pin – for operation. As the devices are self-powered, there is no need for a power source or Vcc pin, with a parasitic power scheme over the data pin. These single-wire EEPROMs have a specified power standby of 700nA, 200µA for write current, and 80µA for ...

UK firm claims highest density MRAM device


UK-based e2v claims to have created the highest density MRAM device in the industry. The firm uses a stacked-package to create a 32Mbit MRAM-based product in a 54-pin TSOP.  The EV5A16B integrates two 16Mbit MRAM devices from Everspin Technologies. According to e2v, the attraction of MRAM technology is that it can offer SRAM-like 35ns read/write timing but with data retention and ...

Micron introduces terabyte SSD using 20nm flash


Micron Technology has announced a terabyte solid state drive (SSD) which it claims will have quick boot-up and will draw as little as 0.15W during normal operation. The NAND flash drive has a speed of up to 95,000 input/output operations per second. The drive’s sequential speeds reach up to 550Mbyte/s for reads and 500Mbyte/s writes, which maxes out the capabilities of the SATA 6 Gb/s ...