Cypress CY14B102 2Mbit and CY14B108 8Mbit nvSRams

Cypress Semiconductor has introduced 2-Mbit and 8-Mbit non-volatile static random access memories (nvSRams), extending Cypress’s nvSRam portfolio from 16-Kbit to 8-Mbit.

The devices feature access times as low as 20 ns, infinite read, write and recall cycles, and 20-year data retention. They are aimed at computing, automotive, industrial and office applications which require continuous high-speed writing of data and absolute non-volatile data security. Systems requiring nvSRam functionality include servers, RAID applications, harsh-environment industrial controls, automotive, medical and data communications.

The CY14B102 2-Mbit nvSRam and CY14B108 8-Mbit nvSRam are ROHS-compliant and directly replace SRAM, battery-backed SRAM, EPRom and EEPRom devices, offering reliable non-volatile data storage without batteries. Data transfers from the SRam to the device’s nonvolatile elements take place automatically at power down.

On power up, data is restored to the SRAM from the nonvolatile memory. Both operations are also available under software control. The new nvSRams are manufactured on Cypress’s S8 0.13-micron SONOS (Silicon Oxide Nitride Oxide Silicon) embedded nonvolatile memory technology, enabling greater densities and improved access times and performance.

The 2- and 8-Mbit nvSRams have a real-time-clock feature that combines the lowest standby oscillator current with the highest performance integrated memory, enabling event time-stamping supported by non-volatile memory. nvSRams offer the best alternative for fast, non-volatile memory. They reduce board space and design complexity compared to battery-backed SRams, and are more economical and reliable than magnetic (MRam) or ferroelectric (FRam) memories.

The products are part of a series of nvSRams from Cypress, which includes 16-Kbit, 64-Kbit, 256-Kbit, 1-Mbit and 4-Mbit devices currently shipping in production volumes. Cypress will use the S8 technology in next generation PSoC(r) mixed-signal arrays, OvationONS laser navigation sensors, programmable clocks and other products. SONOS is highly compatible with standard CMOS technologies and offers numerous advantages including high endurance, low power, and radiation hardness. In addition, SONOS provides a robust, manufacturable and cost-effective product compared to other embedded non-volatile memory technologies.


Cypress’s 2-Mbit and 8-Mbit nvSRams are currently sampling, with production starting in the third quarter of 2008. The devices are available in 48-pin FBGA and 44- and 54-pin TSOPII packages.

Cypress’s nvSRAMs use charge stored on an external capacitor instead of a battery, making the devices compatible with standard PCB assembly processes. The devices are available in 8-Mbit/3V, 4-Mbit/3V, 2-Mbit/3V, 1-Mbit/3V, 256-Kbit/3V, 256-Kbit/5V, 64-Kbit/5V and 16-Kbit/5V configurations.

The devices are highly scalable, with 1-Mbit and 256-Kbit devices available in small 32-pin SOIC and 48-pin SSOP packages. The 8-Mbit, 4-Mbit, and 2-Mbit devices are available in 48-pin FBGA, 44-pin TSOPII and 54-pin TSOPII packages. The nvSRAM product family supports pin-compatible upgrades for additional density and real-time-clock requirements.

More information about Cypress nvSRam products:

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