Mitsubishi launches GaAs HEMT
Mitsubishi Electric has introduced a GaAs HEMT (high electron mobility transistor) that is intended for use in the KU band.
Typical applications are the first stage low noise amplifiers (LNAs) for down converters in direct broadcast satellite and VSAT receivers operating in the 10-12GHz range.
At a frequency of 12GHz the HEMT provides power gain of 13.5dB.
Compared to its predecessor MGF4953A the new MGF4941AL’s gain is 0.5dB better. The noise figure is as low as 0.35dB for the new 4-pin plastic device.