Magnetoresistive RAM (MRAM) is a non-volatile memory which could be a low leakage alternative to SRAM, the challenge has been managing the power consumption.
“We have collaborated with Imec on the 3D stacking program for the last four years and we look forward to expanding our engagement with Imec to include CMOS research and the new MRAM programme,” said Jim Thompson, executive vice president of engineering at Qualcomm Technologies.
“Early engagement on new microelectronic technologies with Imec enables us to deepen the co-optimisation of product architecture and technology while mitigating new technology risk in collaboration with our supply partners,” said Thompson.
As an Imec programme member a fabless chip firm like Qualcomm will get feedback on technology specifications, allowing it to make possible architectural design changes, and so adopt new
technology faster with reduced risks.
“Strong collaboration between foundries, IDMs, fabless and fablite companies, packaging and assembly companies, and equipment and material suppliers play a critical role in pushing forward the development of innovative solutions,” stated Luc Van den hove, president and CEO at Imec.