“EUV has arrived at customer sites and is here to stay,” Anton van Dijsseldonk of ASML, told the European Nanoelectronics Forum 2011 in Dublin this morning.
“The Japanese are nowhere near us,” said van Dijsseldonk, adding, “EUV mirrors can made flat within an atom.”
Scaled up to the whole of Ireland that level of flatness would mean that the entire Republic would have no hill higher than 0.2mm.
The first two EUV alpha tools, at Imec and Albany, have been operational since 2006.
The second generation, pre-production tool, the NXE: 3100 has been shipped to six customers, five of whom have it in operation and one of which switched it on last week. “It’s enabling device development at our customers,” said van Dijsseldonk. It can pattern down to 27nm geometries.
All in all the NXE:3100 has patterned over 2,500 wafers, said van Dijsseldonk. When the power source is upped to 100W next year the 3100 should have a throughput of 60 wafers per hour.
At the moment using a power source of 10W, the 3100’s throughput is 6-7 wph.
The next generation EUV machine, the NXE: 3300, is due to be shipped next summer. ASML has ten orders for it. The machine can do 22nm geometries and, with off-axis illumination, can do 17nm. Throughput is scheduled to be 125 wph.
“Half of the aggregate cost of sales of the NXE: 3300 will be purchased from suppliers, primarily in Europe,” said van Dijsseldonk.
EUV has a great potential advantage as well as its ability to scale, said van Dijjseldonk, and that is the much fewer processing layers it needs. That should, eventually, deliver increased throughput, yield and cost.