Samsung grows good quality graphene

Large area, single crystal wafer-scale graphene can be grown, claim Korean scientists from Samsung Advanced Institute of Technology (SAIT) and Sungkyunkwan University.

Samsung graphene

Growing good quality graphene without crystal boundaries has proved difficult, and much research is still done using flakes of natural graphene as a consequence. Coupling effects with the substrate can also seriously reduce the high carrier mobility for which graphene is prized.

“In the past, researchers have found that multi-crystal synthesis deteriorated the electric and mechanical properties of the material, limiting its application range and making it difficult to commercialise,” said Samsung. The new method synthesises large-area graphene into a single crystal on a semiconductor, maintaining its electric and mechanical properties. It repeatedly synthesises single crystal graphene on the current semiconductor wafer scale.”

The method involves growing graphene on a hydrogen-terminated germanium buffer over a silicon wafer.

Anisotropic two-fold symmetry of the germanium (110) surface allowed unidirectional alignment of multiple seeds, which merge to a uniform single-crystal with predefined orientation,” said researchers in a Science abstract. Weak interaction between graphene and germanium enabled the transfer of graphene and the recycling of the germanium substrate.

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