Bonded SOI wafer claims higher mobility

Peregrine Semiconductor and Soitec have developed bonded silicon-on-sapphire substrates, claimed to out-perform epitaxial types.

Soitec’s direct wafer-bonding technique is being used to transfer thin mono-crystalline silicon layers onto sapphire substrates.

“Peregrine’s legacy silicon-on-sapphire process development and IC design expertise enabled the rapid development of a tuned substrate,” said Peregrine. “The resulting bonded silicon layer offers impressive improvements in transistor mobility and silicon quality beyond conventional silicon-on-sapphire wafers which utilise an epitaxially grown silicon layer.” – although it did not reveal figures.

The wafers will be used for Peregrine’s STeP5 ‘UltraCMOS’ ICs.

Tags: Peregrine Semiconductor, SOI, Soitec, substrate

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