Tech news tagged ‘RF’

Tiny silicon capacitor for 10GHz frequencies

French silicon passive components firm IPDiA has developed a 1nF silicon capacitor in an 0101 sized package.

The silicon capacitor an be used for DC decoupling/DC noise and harmonic filtering in RF and microwave power applications up to 10GHz. 

These wire bondable vertical capacitors built in silicon trenches have…

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Plextek PA for 5G

Plextek RFI has developed a 4-Channel 28GHz power amplifier with 4-Bit digital phase control for 5G RF front ends…

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Qorvo targets RF chips at China 4G LTE

Qorvo says its latest radio front-end chipsets for 4G LTE have been selected for reference designs, with volume production commencing in the third quarter of 2015.

Qorvo is the mobile wireless chip supplier which was formed from the merger of RFMD and TriQuint.

The RF Flex multi-band PA…

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Two-way microwave divider can help jam IEDs

A two-way power divider that is designed for use in military mobile jamming systems to counter the threat of improvised explosive devices (IEDs) is available from Link Microtek. 

Manufactured by Narda Microwave, the Model 2382-2 power divider operates over microwave frequencies from 500MHz to 6GHz and can handle…

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12-way RF MEMS switch

French firm DelfMEMS has micromachined a 12-way RF switch, and will be showing prototypes at Mobile World Congress.

“Until now, companies have tended towards the capacitive switch solution route. We chose contact or Ohmic switching because of the superior performance,” said CEO Cybele Rolland. “This is a key milestone…

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Direct conversion receiver means smaller radars, says ADI

A direct conversion receiver development platform has been designed by Analog Devices for the L- and S-band frequency radar bands.

The AD-FMCOMMS6-EBZ platform is a 400MHz to 4.4GHz receiver (1350MHz to 1650MHz with installed filters) in a VITA57-compliant form factor.

The receiver integrates the AD9652…

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GaN technology storms transistor market

Liam Devlin and Andy Dearn describe the design of a 25W X-band gallium nitride (GaN) power amplifier.

Gallium nitride (GaN) technology is very well suited to the realisation of solid-state microwave power amplifiers.

High electron mobility transistors (HEMTs) fabricated on GaN processes have high breakdown voltages, can be…

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RF chip can be programmed for MIMO and 4G

Lime Microsystems is shipping second generation of its field programmable RF devices, with dual radio transceivers that cover the frequency range 0.1 to 3800MHz.

This means the devices, with programmable filters and gain, cover all the cellular bands used in 2G, 3G and 4G networks, as well as many…

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