Toshiba Electronics Europe has added two new devices to its UMOS V-H Series high-speed switching MOSFETs to provide higher drain current (ID), and lower on-state resistance (RDSON).

Developed by Toshiba, the TPCA8012-H and TPCA8019-H n-channel MOSFETs extend the UMOS V-H Series with higher drain current of 40 Amps (A) and 45A (max.) and lower RDSON of 4.9 milliohms (mO) and 3.1mO , respectively (max. value at VGS = 10V). The UMOS V-H Series MOSFETs are targeted for use in synchronous DC-DC converters in power supplies.

The new devices join nine other members of the UMOS V-H Series to provide a range of drain current, drain-source voltage, and a selection of other performance characteristics to meet various application requirements.

According to Toshiba, the UMOS V-H Series improves many of the key parameters required for better power efficiency of low-side MOSFETs in a synchronous DC-DC converter, including lower on-state resistance (RDSON ) and reduced self-turn-on loss. This is achieved through lower gate-to-drain capacitance (Cgd), lower Cgd/Cgs ratio, lower gate resistance (Rg), and optimised gate threshold voltage.

On the high-side MOSFET, Toshiba UMOS V-H technology enables fast switching, achieved through low gate switch charge (QSW) and gate resistance (Rg).

The TPCA8012-H and TPCA8019-H are offered in SOP Advance packages with a footprint of 5.0mm x 6.0mm to help minimize board area and device temperature.

The TPCA8012-H features maximum drain current of 40A, a drain-source voltage maximum rating of 30V and a RDSON of 4.9mO (max. value at VGS = 10V). TPCA8019-H is also designed to operate with a 30V drain-source voltage maximum rating, with a maximum drain current of 45A and an RDSON of 3.1mO (max. value at VGS = 10V). The SOP Advance package from Toshiba features a 41 percent lower profile than a standard SOP-8 package, and enables approximately 47 percent higher power dissipation.

See www.toshiba-components.com
 

UMOS V Overview

UMOS V is a fifth generation process technology in the Toshiba fast switching series. It utilizes a trench gate structure that combines low RDSON with fast switching. Low gate resistance, a lower gate-to-drain capacitance (Cgd), and lower Cgd /Cgs ratio also help reduce the amount of self-turn on loss.