Semikron has added a new topology for use in three-level inverters to its Semitop IGBT product range.

The topology is designed to integrate IGBT technology with lower switching and conduction losses to produce losses 60% lower than two-level inverters. The module has been designed for low commutation inductivity compared to half-bridge modules.

The improved efficiency of the DC/AC conversion is intended for UPS applications in the power range from 5kVA to 80kVA.

The single three-level inverter can be used to replace the two modules used for a standard two-level half-bridge topology. The topology for the three-level inverter is realised by the series connection of IGBTs with which it is possible to obtain higher reverse IGBT blocking voltages.

By connecting three of these modules, it is possible to achieve a complete three-phase three-level inverter topology with maximised electrical and thermal efficiency. The sinusoidal output waveform makes it possible to reduce the size and complexity of output filters. 

Current ratings available at present are from 20A to 150A employing 600V IGBT silicon. Modules operate with input power from 5kVA to 80kVA in power supply applications.

The IGBTs for three-level inverters are available in two housings: SEMITOP 3 (55x31x12mm) for modules with current ratings from 20A to 50A and SEMITOP 4 (60x55x12mm) for modules with current ratings from 75A to 150A.

See http://www.semikron.co.uk