Hittite Microwave's two SMT packaged GaAs pHEMT MMIC low noise amplifiers feature a failsafe bypass mode. They are ideal for automotive, cellular/3G, WiMAX/4G and test equipment applications from 700 to 2200 MHz.

The HMC668LP3E and the HMC669LP3E are GaAs pHEMT MMIC low noise amplifiers which are rated from 700 to 1200 MHz and 1700 to 2200 MHz, respectively. These compact LNA MMICs feature an integrated LNA bypass path which makes them ideal for infrastructure and subscriber applications where received signal strengths can vary significantly over time.

Under normal operation, a single CMOS compatible control line is used to switch between LNA mode, and a low loss bypass mode. In the event of a DC power failure, the failsafe bypass mode is enabled automatically, allowing received signals to pass through to the LNA output.

The HMC668LP3E and HMC669LP3E MMIC LNAs deliver up to 17 dB gain and +33 dBm output IP3, with noise figure as low as 0.9 dB in LNA mode. In failsafe bypass mode, the noise figure and insertion loss are as low as 1.5 dB. These versatile LNAs are internally matched, and are housed in pin compatible and RoHS compliant 3x3 mm QFN SMT packages.

Both LNAs operate from either a +3V or +5V bias supply, and feature an externally adjustable bias current which allows the designer to tailor the output power of the LNA for each application.

Samples and evaluation PC boards for all SMT packaged products are available from stock and can be ordered via the company’s e-commerce site or via direct purchase order. 

More information: www.hittite.com