HVVi Semiconductors products for airborne Distance Measuring Equipment (DME) applications operate in the 1025 to 1150 MHz frequency band. Based on the industry’s High Voltage Vertical Field Effect Transistor (HVVFET) architecture, the HVV1012-060, HVV1012-100 and HVV1012-250 RF transistors deliver high output power and gain in a small package.

The devices complement products in the 1.2 to 1.4 GHz and 1030 to 1090 MHz bands, and extend HVVi Semiconductor’s portfolio across all three pulsed applications in the L-band frequency.

The RF power transistors allow designers of airborne DME systems to improve performance, reduce product footprint and weight, and maximize system reliability at the same time.

The three power transistors allow designers to build high density, high impedance systems in easy-to-match 48V components. Designed for L-band avionics applications operating between 1025 MHz to 1150 MHz, the HVV1012-060 RF transistor is designed for 48V operation and delivers over 60W of pulsed output power.

The device delivers 23 dB of gain when pulse width = 10 µsec and pulse duty cycle = 1% at VDD = 48V and IDQ = 25 mA. To boost system reliability, the HVV1012-060 is specified to withstand a 20:1 VSWR over all phase angles at the rated output power and operating voltage across the entire frequency band.

The HVV1012-100 RF transistor is also designed for L-band applications in the 1025 to 1150 MHz frequency band. It also operates off a 48V supply voltage and delivers over 100W of pulsed output power. The transistor offers a power gain of 20.5 dB under a pulse width of 10 µsec and a pulse duty cycle of 1% at VDD = 48V and IDQ = 50 mA. Like the HVV1012-060, the device is specified to withstand a 20:1 VSWR.

The third product in the series, the HVV1012-250 RF transistor, delivers more than 250W of pulsed output power. Operating off a 48V supply, the transistor offers a gain of 20 dB with a pulse width = 10 µsec and pulse duty cycle = 1% at VDD = 48V and IDQ = 100 mA. Like the other products in the family, this device is specified to withstand a 20:1 VSWR over all phase angles at the rated output power and operating voltage across the entire frequency band.
 
The HVVFET architecture’s performance advantages in terms of gain, efficiency and impedance allow designers to eliminate amplification stages in Power Amplifiers (PAs), reduce parts count, and shrink PCB space requirements. For example, designers building a 1 kW PA can use the HVV1012-060 to drive multiple HVV1012-250 devices and replace three-stage amplifiers using comparable LDMOS or bipolar components.

A complete 48V-compatible product line simplifies power supply design and minimizes power supply circuitry. At the same time, the technology’s ruggedness allows system designers to eliminate bulky and costly isolators and, in the process, reduce system weight and size, a consideration in weight- and space-constrained avionics environments.

Price and availability

All three devices are sampling now and come in a compact HV400-style, two-lead metal flanged package with liquid crystal polymer lid. The package is MIL-STD-883 qualified.

The HVV1012-060 sells for $199.01 in 1-24 unit quantities, the HVV1012-100 costs $226.15 in 1-24 quantities and the HVV1012-250 is available for $398.31 in 1-24 quantities.

More information: www.hvvi.com