Toshiba and Toshiba Electronics Europe 43nm single-level cell (SLC) NAND Flash memory products are available in densities ranging from 512Mbits to 64Gbits and in a total of 16 versions.

The range includes three products, 16Gbits, 32Gbits and 64Gbits, which integrate monolithic 16Gbits chips fabricated with 43nm generation process technology, the highest density chips currently available.

The devices will be available from the first quarter of 2009.

SLC chips can read and write large amounts of data at high speed, support a large number of read and write times, and offer high-level reliability.

Toshiba developed the SLC devices to meet diversifying applications, and its enhanced line-up offers support for mobile phones, flat panel TVs, OA equipment, and servers, all of which require high levels of read and write speeds and reliability.

In recent years, Toshiba has promoted expansion of the NAND flash memory market by accelerating development of high density multi-level-cell (MLC) chips to be used for high capacity data storage in markets such as memory cards and MP3 players.
 
Production of SLC chips has been limited, and with 56nm and 70nm process technologies. In bringing a wider range of advanced SLC flash memories suitable for higher performance storage applications into its line-up, Toshiba aims to expand its selection of high-value added products for diverse embedded applications, and will promote mass production through the application of advanced process technology.

More information: www.toshiba-components.com