NXP Semiconductors has introduced its first integrated Doherty amplifiers for TD-SCDMA and WCDMA basestations, based on its RF transistor technology.

The BLD6G21-50 and BLD6G22-50 amplifiers are designed to deliver efficiency of greater than 40% at an average power of 10W. "This enables 35% lower power dissipation under multi-carrier signal operation compared to class AB amplifiers," said the company.

"Integrated Doherty technology is considered a holy grail in amplifiers," said Mark Murphy, director of marketing for RF power products at NXP Semiconductors.

The Doherty amplifier can be applied in the same way as a standard class AB transistor. The BLD6G21-50 incorporates an integrated Doherty concept based on the company's GEN6 LDMOS technology which is designed specifically for TD-SCDMA operation at frequencies from 2010MHz to 2025MHz.

A sister device operates at frequencies between 2110MHz to 2170MHz for W-CDMA transmission. Both main and peak devices and delay lines as well as the input splitter and output combiner are integrated into a standard transistor package with single input and output leads, thus minimising required board space.

The package has two additional pins, one of which is being used for external biasing purposes.

The company claims to have the smallest Doherty design and record efficiency, "cutting total system power consumption significantly".

More information: www.nxp.com