Hitachi Europe, Power Devices Division has announced two high voltage IGBT modules. The 3.3KV MBN1000E33E2 and MBN1500E33E2 IGBT modules offer a current rating of 1000 Amp and 1500 Amp respectively.

The modules are manufactured using Hitachi's E2 series fine pattern silicon process technology which enables a more cost effective production process, increased current capability and an increase in the active silicon cell area.

The use of E2 series technology enables the new MBN1000E33E2 and MBN1500E33E2 IGBTs to achieve a higher current rating than existing E series products.

The MBN1000E33E2 is available in a small footprint package and the MBN1500E33E2 is available in a large footprint package. Typical applications for Hitachi's IGBT modules include propulsion and auxiliary power systems, renewable energy, power conditioning and heavy industrial systems.

More information: http://www.hitachi.eu/pdd