For charging and switching circuits, Diodes has introduced dual device combinations in thermally efficient ultra small DFN packaging.

The DMS2220LFDB and DMS2120LFWB co-package a 20V P-channel enhancement mode mosfet with a companion diode in a choice of 2x2mm DFN2020 and 3x2mm DFN3020 packages.

The DMP2160UFDB, co-packages two of the same mosfets in the DFN2020 format.

The mosfets used in these packages feature a low gate charge and a typical RDS(on), of 86mohm at Vgs of 1.8V.

With a typical low forward voltage of 0.42V, an integrated barrier rectifier will reduce power dissipation compared to conventional Schottky diodes.

More information: http://www.diodes.com