International Rectifier has launched a series of 25V and 30V N-channel trench HEXFET power mosfets with enhanced switching performance for synchronous buck converter and battery protection.

The devices’ low conduction losses are designed to improve full-load efficiency and thermal performance while low switching losses help to achieve high efficiency even at light loads.

The mosfets are offered in a power QFN package to provide improved power density when compared with an SO-8 package while keeping the same pin-out configuration.

Single and dual N-channel devices are available. Single devices are offered in a PQFN 5x6mm and 3x3mm package optimised for high volume production in addition to D-PAK, I-PAK and SO-8 packages while dual devices are offered in an SO-8 package. 

See www.irf.com