Freescale Semiconductor claims to have technology which can increase basestation efficiency in GSM Edge networks.

The three RF power transistors, which are based on laterally-diffused metal oxide semiconductor technology, are aimed at the development of GSM Edge mobile phone systems.

There is still sees a strong market for the GSM enhancement technology despite the move to 3G.
For GSM EDGE applications, the MRFE6S9046N operates from 920 to 960MHz and delivers a 17.8W average RF power output with 19dB of gain, up to 42.5% efficiency and EVM of up to 2.1% RMS.

The internal output matching in the surface mount device enables a practical terminal impedance at the fundamental frequency, but also includes second and third harmonic terminations for higher efficiency, in line with the theory of Class F amplifiers.

The MRF8S9100H/HS (920 to 960 MHz) and MRF8S18120H/HS (1805 to 1880 MHz) are 28 V devices designed for Class AB and Class C operation in GSM and EDGE systems.

In GSM EDGE service, the MRF8S9100H/HS delivers 45W average power gain of 19.1dB and efficiency of 44% at 940MHz, and EVM of 2.0% RMS. The MRF8S18120H/HS delivers 46W average power gain of 18.2dB, efficiency of 42% at 1840MHz and EVM of 1.7% RMS, said the company.

See www.freescale.com