Diodes has put a complementary pair of 100V enhancement mode mosfets into an SO8 package. 

The ZXMC10A816 is aimed at H-bridge circuits in DC fan and inverter circuits, Class D amplifier output stages and an array of other 48V applications.

The intention is to offer designers the option to replace equivalent devices in SOT223 and DPak (TO252) packages.

The N- and P-channel mosfets used in the dual device package exhibit low gate charge and typical RDS(on) of respectively 230mohm and 235mohm at VGS of 10V, ensuring switching and on state losses are minimised.  2.4W and 2.6W are respective power dissipation figures.

See http://www.diodes.com