Vishay has announced 600V 0.19Ω mosfets in tabbed packages.

The SiHP22N60S (TO-220), SiHF22N60S (TO-220 Fullpak), SiHG22N60S (TO-247), and SiHB22N60S (TO-263) achieve the on-resistance with 10V on their gates.

The devices are aimed at power factor correction and PWM in LCD TVs, PCs, servers and telecom boxes.

Gate charge is 98nC, producing a 18.62ΩnC gate charge times on-resistance figure of merit.

Devices are 100% avalanche tested and peak current handling is 65A pulsed and 22A continuous.

"Compared to previous-generation 600V power mosfets, they offer improved transconductance and reverse recovery characteristics," claimed the firm.

Samples are available now, with production later in Q1.

For more information, see http://www.vishay.com