Toshiba has expanded its range of 30V mosfets with six devices in TSON Advance packages.

The thin 3.3mm x 3.3mm x 0.9mm TSON Advance package is designed to reduce mount area requirements compared to the widely used 5.0mm x 6.0mm SOP-8 package, while achieving the same power dissipation of 1.9W.

The range includes five N-channel mosfets and one MOSBD, a combination mosfet and Schottky barrier diode in a single die that provides a low inductance structure and thus, improves power efficiency.

Current ratings range from 13A to 26A, RDS(ON) (typ.) from 4.3 to 12.2mO, input capacitance from 990 to 2200pF (typ.), and reverse transfer capacitance from 54 to 140pF (typ.).

For more information, see www.toshiba-components.com