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Saturday 26 May 2012
Products
Analogue / Linear / Mixed Signal ICs
Toshiba 60V power mosfet is surface mount
Wednesday 2 June 2010
Toshiba Electronics Europe has introduced a 60V semi-power mosfet in a TSM package that measures 2.9mm x 2.8mm x 0.7mm.
The small signal SSM3K318T mosfet is designed for battery voltage boosting in white LED backlight applications.
Battery-powered devices traditionally use 20V rated chips, but for LED backlighting applications with series connection of white LEDs, voltages need to be boosted to higher levels leading to maximum drain-source voltage requirements of 60V.
The SSM3K318T features an ON-resistance of 83.5mW (typ.) at VGS = 10V, and capacitance of 235pF at VDS = 30V.
The small signal SSM3K318T mosfet is designed for battery voltage boosting in white LED backlight applications.
Battery-powered devices traditionally use 20V rated chips, but for LED backlighting applications with series connection of white LEDs, voltages need to be boosted to higher levels leading to maximum drain-source voltage requirements of 60V.
The SSM3K318T features an ON-resistance of 83.5mW (typ.) at VGS = 10V, and capacitance of 235pF at VDS = 30V.
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