Diodes has introduced two dual channel devices which integrate a control mosfet with a proprietary DIOFET, instead of a Schottky, into a single SO8 package for point-of-load converter designs.

The low side DIOFET device integrates a power mosfet and anti-parallel Schottky diode into a single die. 

According to the supplier the DIOFET has low RDS(on) and a forward voltage that is 25% lower than comparable mosfet/Schottky designs.

The device characteristics enable the DMS3017SSD and DMS3019SSD to deliver a point-of-load conversion efficiency of 94% under full load conditions, said the supplier.

Another feature is the lower temperature operation of the components which, according to the supplier, can also contribute to an improvement in reliability, since every 10°C reduction in mosfet junction temperature doubles the lifetime reliability of the point-of-load converter.

For more information, see http://http://www.diodes.com