The DMP3010LPS 30V rated p-channel enhancement mode mosfet from Diodes is offered in a powerDI5060 package with lower thermal resistance than SO8.

With a junction to case thermal resistance (Rthj-c) of 2.10C/W the powerDI5060's thermal resistance is 10 times lower than an SO8 alternative, said the supplier.

Its off-board height of 1.1mm is also 54% less than that of SO8.

The device’s typical on-resistance is 7.8mohm at 10V VGS, so on-state losses are effectively minimised in load switching and battery charging duties.

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