Products
Discretes
Rohm SiC Schottky diode for high temperatures
Thursday 3 February 2011
Rohm’s latest range of SiC Schottky barrier diodes (SBDs) feature a reverse recovery time of 15ns.
This is significantly less than the 35 to 50ns of conventional Si-based diodes.
Reverse recovery time is the period during which there is an instantaneous flow of reverse current when the voltage direction has changed from the forward to the reverse direction, regardless of temperature.
This stability enables high-temperature driving without increasing switching loss.
As a result, recovery loss is reduced by as much as 60%, decreasing heat generation as well.
Forward voltage of the diode is 1.5V at 10A.
It is expected that commercially priced SiC devices will have performance benefits over silicon devices in high temperature designs.
SiC has a band gap approximately three times greater, a dielectric breakdown field ten times higher, and a thermal coefficient three times larger than silicon.
The high temperature capability, combined with low-loss at high switching speeds of the SiC devices will be of benefit in PFC (power factor correction) circuits, converters, and inverters for power conversion and air conditioning units.
SiC devices are of specific interest in the design of power inverters for hybrid and electric vehicles (HEVs and EVs).
In vehicles the conversion rate of electrical energy to mechanical energy is an important parameter.
One of the problems with SiC has been the search for reliable sources of the base material and processing for production.
Rohm is confident it now has a stable production system for SiC devices and it has acquired German firm SiCrystal to obtain a stable supply of single crystalline SiC wafers to support commercial production.
www.rohm.com/eu/
This is significantly less than the 35 to 50ns of conventional Si-based diodes.
Reverse recovery time is the period during which there is an instantaneous flow of reverse current when the voltage direction has changed from the forward to the reverse direction, regardless of temperature.
This stability enables high-temperature driving without increasing switching loss.
As a result, recovery loss is reduced by as much as 60%, decreasing heat generation as well.
Forward voltage of the diode is 1.5V at 10A.
It is expected that commercially priced SiC devices will have performance benefits over silicon devices in high temperature designs.
SiC has a band gap approximately three times greater, a dielectric breakdown field ten times higher, and a thermal coefficient three times larger than silicon.
The high temperature capability, combined with low-loss at high switching speeds of the SiC devices will be of benefit in PFC (power factor correction) circuits, converters, and inverters for power conversion and air conditioning units.
SiC devices are of specific interest in the design of power inverters for hybrid and electric vehicles (HEVs and EVs).
In vehicles the conversion rate of electrical energy to mechanical energy is an important parameter.
One of the problems with SiC has been the search for reliable sources of the base material and processing for production.
Rohm is confident it now has a stable production system for SiC devices and it has acquired German firm SiCrystal to obtain a stable supply of single crystalline SiC wafers to support commercial production.
www.rohm.com/eu/
Site Navigation
Active suppliers
Agilent Technologies
Analog Devices
Harting
LEM
Maxim Integrated Products
NXP
Rohde & Schwarz
Tektronix
Toshiba
Yokogawa
Search for a supplier
Blogs on EW
Mannerisms
Chip industry musings from David Manners
On AirViews from a UK technology startup
Made by MonkeysAnalysis of bad designs
Gadget MasterBuild ingenious inventions, win £250
Distribution WorldLatest distribution news and views
Directive DecoderGary Nevison on industry legislation
Electro-RamblingsEW website blog, highlighting new content and features
Chips and BeerOut on the far flung semiconductor trail