Toshiba Electronics latest low voltage n-channel mosfet in its SSM series has been optimised for low loss standard voltage switching requirements.

It exhibits maximum ON resistance (RDS(ON)) values of only 42mΩ and 28mΩ with switching voltages of VGS=4.5V and 10V, respectively.

The SSM3K333R is specified for a maximum drain-source voltage (VDSS) of 30V. As a result the device is also compatible with many industrial power management applications.

Another improvement is the SOT-23F package which leads to a maximum DC current rating of 6A and a drain power dissipation capability of 1W from a package that has dimensions of only 2.9mm x 2.4mm.

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