STMicroelectronics has announced RF power transistors with the reliability for use in wireless basestations and repeaters used by organisations such as security and emergency services.

The LET family of RF transistors uses ST’s latest STH5P LDMOS technology to achieve increased power saturation capability, which according to the supplier minimises distortion at higher power levels.

The devices can operate at frequencies up to 2GHz with improved linearity, ruggedness and reliability. Efficiency is also increased by 10-15% compared to devices using earlier LDMOS processes.

The devices have 3dB higher gain than their predecessors and there is an increase in breakdown voltage to 80V from 65V and improved thermal performance, leading to greater reliability, as well as increased load mismatch capability.

Six devices belonging to the LET family are currently in full production and five more will be released to production in Q4 2011.

Devices in cost saving Power-SO 10RF surface mount plastic packages with formed or straight leads are currently under qualification.

www.st.com/rf