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International Rectifier IGBTs have low Vce
Monday 3 October 2011
International Rectifier has launched a pair of trench insulated gate bipolar transistors (IGBTs) which are designed for use in induction heating and resonant switching applications such as welding and high power rectification.
The 1200V IGBTs use what the supplier called “thin-wafer trench technology” which it claimed offers low VCE(on) and fast switching.
The devices feature a 1300V repetitive peak rating for added system reliability. The IGBTs are co-packaged with a low forward-voltage high peak current soft forward-recovery diode optimized for resonant zero current turn-on operation.
The supplier also has a family of IGBTs for motor drive and hard switching applications.
www.irf.com
The 1200V IGBTs use what the supplier called “thin-wafer trench technology” which it claimed offers low VCE(on) and fast switching.
The devices feature a 1300V repetitive peak rating for added system reliability. The IGBTs are co-packaged with a low forward-voltage high peak current soft forward-recovery diode optimized for resonant zero current turn-on operation.
The supplier also has a family of IGBTs for motor drive and hard switching applications.
www.irf.com
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