DPAK+ MOSFETs for automotive applications Toshiba Electronics Europe (TEE) has announced a new range of rugged automotive power MOSFETs that combines the company’s latest trench MOS process with its enhanced DPAK+ package technology. The new MOSFETs will significantly improve application performance while reducing PCB real estate and noise in…
New N-Channel Mosfets with ultra-low ON resistance save space and power MOSFETs with ultra-low ON resistance saves space and power…
New WHITEPAPER: DTMOS IV Efficiency Advantages of Superjunction Transistors Superjunction MOSFETs are able to deliver a combination of high conduction and switching efficiency, small die area and high breakdown voltage that conventional devices cannot achieve. This article explains how superjunction technology delivers these benefits for designers, and examines the latest…
WHITEPAPER: How to Improve Efficiency of AC/DC and DC/DC Power Conversion Through Optimised MOSFET Technology
This paper describes how one of the newest generations of MOSFETs enables designers to deliver improvements in switching performance at the same time as reducing on-resistance…
Toshiba’s 6th Generation 600V IGBTs Improve Hard Switching Efficiency Compact 15A, 20A, 30A and 50A devices with integrated diode suit motor drive, inverter and UPS designs…
RELEASE: Toshiba Launches New Line-up of MOSFETs and Schottky Diodes for Wireless Power Transfer Applications Schottky barrier diodes and dual N-Channel MOSFETs achieve industry’s highest performance in a 2mm package…
Toshiba Electronics announces next-generation MOSFETs for battery operated equipment Medium power devices offer multiple options for compact, high-current switching of power peripheral circuits…
Toshiba Electronics launches new compact, integrated IGBT technology for induction heating 1200V, 40A device for voltage resonance inverter switching integrates IGBT and reverse recovery diode in single compact device…