Cubic GaN on silicon substrates, and the green gap

Rensselaer Polytechnic Institute and the University of New Mexico have got together to develop a way of growing cubic GaN on silicon substrates.

cubic GaN Rensselaer Christian Wetzel

Compared with the hexagonal GaN used in all commercial leds, cubic GaN has a lower bandgap and therefore emits longer weavelengths for a given level of indium doping – potentially stretching efficient emission into green.

There is much more about the project on the Electronics Weekly new site.

UK cubic silicon carbide start-up Anvil Semiconductors can use its substrates to grow cubic GaN, and with UK led maker Plessey Semiconductors and the University of Cambridge has a project to do so.

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