IR blames datasheets for holding back FETs

IR blames datasheets for holding back FETs
Steve Bush Power MOSFET datasheets are no longer up to the job, claims International Rectifier (IR). “The basic format was developed over ten years ago, when power FETs were used in less sophisticated ways,” said Chris Ambarian, technical marketing director at IR. “Now that every ounce of performance is being used, they don’t contain enough information to allow designers to make proper choices.” Ambarian goes further, suggesting the data sheet format has held back MOSFET development: “Semiconductor companies have concentrated on a few headline figures like RDSon and number of cells per square inch. Improving these doesn’t necessarily make a MOSFET the most efficient solution in a given application,” said Ambarian. Izak Bencuya, manager of Fairchild’s FET design centre made a similar point in February at the launch if its latest MOSFET range – which does not even have a cellular structure. He said: “Trading RDSon against gate capacitance can improve the overall efficiency of a power supply.” IR’s Ambarian made these comments at the launch of his companies latest MOSFETs, the IRF7805 and 7807 (synchronous rectifier and power switch respectively), which are aimed at powering Intel’s 1.6V Pentium II for portable applications. These have been developed using IR’s Technology Toolbox design method. This allows power FETs to be developed in as little as ten days to allow in-house engineers to have custom devices made.


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