Memory link-up leads to magnetic force for PCs

Memory link-up leads to magnetic force for PCs
David Manners Siemens, Bosch and government laboratories in Germany are developing Magnetic RAMs (MRAMs) which could be the ideal memory – dense, non-volatile, fast to read and write, low power and with infinite read/write cycles. MRAMs can solve the increasing problem of the slow access times of hard disks. It would eliminate boot-up time in PCs, allow much quicker downloading of material over the Internet and it could replace flash memory in mobile phones and portable computers. One gigabit MRAMs are considered feasible with sub-10mW power consumption and access times of 40/50ns. “We are working on MRAMs in the Central Research Department at Siemens and at the BMBF – the government’s research department,” Hans Pieter Bette, executive v-p of the memory division at Infineon Technologies, told EW. MRAMs are based on the same ‘spin electronics’ technology which is used for giant magneto-resistive (GMR) heads in disk drives. Although GMR is the technology initially pursued for MRAM, most researchers are now focusing on a related technology called tunnelling magnetic resistance (TMR). IBM, Motorola and HP are also pursuing TMR research.


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