Attopsemi’s I-fuse OTP IP suits harsh applications such as automotive, 3D IC, and IoT applications, and can guarantee zero-program defects.
Features of the I-fuse include:
Limited program current below a catastrophic breaking point
Use of junction diode, instead of MOS, as a program selector in an OTP cell
Smaller cell improving program efficiency enabling program current reduction
Attopsemi develops and licenses fuse-based OTP memory IP for CMOS process technologies from 0.7um to 7nm and beyond.