IBM, Samsung, Globalfoundries develop 5nm GAAFET IC

IBM, Samsung and GlobalFoundries have made 5nm ICs using gate-all-around (GAA) transistors and EUV lithography.

The transistor technology, dubbed GAAFET, is a finfet with a horizontal fin which becomes a silicon nanowire (or nanosheet) stretched between the source and drain.

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The IBM/Samsung/ GloFo GAAFET has three nanosheets stacked on top of each other running between the source and drain.

The result is a comparatively large volume of gate and channel material which makes the GAAFET reliable, high-performance, and better for scaling.


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