Samsung leads firms in stacked DRAM initiative

Samsung Electronics and Micron Technology have created an industry group to collaborate on the implementation of an open interface specification for a new memory technology called the Hybrid Memory Cube (HMC).

Micron and Samsung are the founding members of the Hybrid Memory Cube Consortium (HMCC), and will work with fellow developers Altera, Open Silicon and Xilinx to bring the technology to market.

The aims of the initiative are to address memory bandwidth in high-end embedded systems.

“The term “memory wall” has been used to describe the problem. Breaking through the memory wall requires a new architecture that can provide increased density and bandwidth at significantly reduced power consumption,” said the companies.

Details of HMC technology are vague, but it uses a stack of through-silicon-via (TSV) bonded DRAM die to improve memory density and data throughput.

The companies claim a x15 improvement in density over traditional DDR3 DRAM devices.

“This collaborative industry effort will serve as an accelerator for highly promising technology that will benefit the entire industry,” said Jim Elliott, v-p memory marketing at Samsung Semiconductor.

 “HMC is unlike anything currently on the radar,” said Robert Feurle, Micron’s Vice President for DRAM Marketing. 

The consortium will initially define a specification to enable applications ranging from large-scale networking to industrial products and high-performance computing.


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